IPS designed 18,000sf of existing shell space within the planned area of the building, provision of additional base building components such as a cooling tower, chiller, boiler, generator, UPS, acid scrubber, exhaust fans, pumps and installation and hook-up of one set of tools (Eighty (80) tools, denoted as set S800).  The fit-out included provision of new utilities to support the full set of tools planned for this area.

The facility manufactures Gallium Arsenide Heterojunction BiPolar Transistor (GaAs HBT) semiconductors and power amplifiers for cellular, WLAN, and GPS components/handsets.

Project included installation of 80 Tools, 700,000 CFM air thru 22 AHUs, welded pre-fab plenums and bulk gas, specialty gas & chemical distribution.

• Fab 3 Expansion - Overcome massive time, production and constructability constraints.
• Design phase of the project had to be performed aggressively to confirm sizes of all equipment and key utility subsystems/laterals that will have to be pre-fabricated off-site to ensure the most timely installation in the field.
• Addition of Class 10/100/10,000 Clean-rooms designed to meet production demands without interrupting current manufacturing.