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IPS

Semiconductor Manufacturing Expansion

Fast-track EPCMV approach for a Fab 3 expansion inclusive of the fit-out of approximately 18,000sf of existing shell space within the future area of the building, provision of additional base building components such as a cooling tower, chiller, boiler, generator, UPS, acid scrubber, exhaust fans, pumps, and installation and hook-up of one set of tools (denoted as set S800).  The fit-out includes the provision of new utilities to support the full set of tools planned for this area.  The facility manufactures Gallium Arsenide Heterojunction BiPolar Transistor (GaAs HBT) Semiconductors and Power Amplifiers for Celluar, WLAN, and GPS Components/Handsets.